Silicon single-photon avalanche diodes with nano-structured light trapping

Neural Imaging Using Single-Photon Avalanche Diodes

Introduction: This paper analyses the ability of single-photon avalanche diodes (SPADs) for neural imaging. The current trend in the production of SPADs moves toward the minimumdark count rate (DCR) and maximum photon detection probability (PDP). Moreover, the jitter response which is the main measurement characteristic for the timing uncertainty is progressing. Methods: The neural imaging pro...

Memory effect in silicon time-gated single-photon avalanche diodes

Silicon Single Photon Avalanche Diodes for Quantum Key Distribution

The progress in silicon planar device technologies has led single-photon avalanche diodes (SPAD) to emerge from the laboratory research phase and be commercially available from various manufactures. QKD systems can already exploit the available planar Si-SPAD devices, but they set strong demand for improved features and performance. A response can be given by new developments in a dedicated sil...

Neural Imaging Using Single-Photon Avalanche Diodes

INTRODUCTION This paper analyses the ability of single-photon avalanche diodes (SPADs) for neural imaging. The current trend in the production of SPADs moves toward the minimum dark count rate (DCR) and maximum photon detection probability (PDP). Moreover, the jitter response which is the main measurement characteristic for the timing uncertainty is progressing. METHODS The neural imaging pro...

Resonant-Cavity-Enhanced Single Photon Avalanche Diodes

We present a resonant-cavity-enhanced Single Photon Avalanche Diode (SPAD) fabricated on a reflecting siliconon-insulator (SOI) substrate. The substrate incorporates a two period distributed Bragg reflector fabricated using a commercially available double-SOI process. The resonant-cavity-enhanced (RCE) SPAD detectors have peak photon detection efficiencies ranging from 41% at 780nm to 32% at 85...